Saturday, April 26, 2025
HomeNewsIndia NewsNexperia announces next generation 650 V Gallium Nitride (GaN) Technology

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology

Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Nexperia, the expert in essential semiconductors, has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers and controls.

The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions.   Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.

Dilder Chowdhury, Nexperia’s GaN Strategic Marketing Director commented: “Customers need a highly-efficient, cost-effective solution for high power conversion at 650 V and around the 30-40 mΩ RDS(on), where applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack mounted telecoms, 5G and datacenters. Nexperia continues to invest in the development and expansion of its range of products using next generation GaN processes, initially releasing traditional TO-247 versions and bare die format for power module makers, followed by our high-performance surface mount CCPAK packages.”

Nexperia’s CCPAK surface mount packaging adopts Nexperia’s proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves reliability. CCPAK GaN FETs are available in top- or bottom-cooled configurations making them very versatile and help further improving heat dissipation.

650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK are sampling now.

For more information, visit www.nexperia.com

ELE Times Bureau
ELE Times Bureauhttps://www.eletimes.com
ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.
RELATED ARTICLES

Most Popular

Recent Comments