In the fast-evolving landscape of AI servers, telecom infrastructure, and battery management systems (BMS), reliable and efficient power management is critical. Infineon Technologies AG has unveiled the OptiMOS 5 Linear FET 2, a next-generation MOSFET engineered to address the complex demands of safe hot-swap operation and battery protection.
This advanced device bridges the gap between the low RDS(on) performance of trench MOSFETs and the robust safe operating area (SOA) of classic planar MOSFETs. By balancing these characteristics, the OptiMOS 5 Linear FET 2 ensures enhanced reliability in high-power applications.
Key Features and Benefits
1. Robust Safe Operating Area (SOA):
The OptiMOS 5 Linear FET 2 offers a 12x higher SOA at 54 V for 10 ms and a 3.5x improvement at 100 µs compared to standard OptiMOS 5 MOSFETs with similar RDS(on). These advancements are crucial for handling high inrush currents during hot-swapping in AI servers and telecom systems.
2. Low RDS(on):
The device minimizes operational losses, boosting energy efficiency. This is particularly significant in applications requiring long-term reliability, such as data centers and telecom infrastructures.
3. Improved Current Sharing for BMS Applications:
Optimized transfer characteristics enable precise current distribution among parallel MOSFETs, a critical factor in battery protection scenarios like short-circuit events. This ensures system reliability and simplifies design.
4. Reduced Component Count and Cost:
The enhanced SOA and current-sharing capabilities allow for up to a 60% reduction in components in designs driven by short-circuit current requirements. This reduction translates into lower bill-of-material (BOM) costs, improved design flexibility, and higher power density.
5. Versatile Packaging:
Available in a TO-leadless package (TOLL), the device supports a broader range of applications, offering designers the flexibility to create compact, high-density solutions.
Applications
The OptiMOS 5 Linear FET 2 is optimized for diverse applications requiring robust hot-swap and battery protection capabilities, including:
– AI servers and telecom systems, where safe hot-swapping ensures operational continuity.
– Battery management systems (BMS): Protects batteries from high inrush currents and short circuits, ensuring system longevity and safety.
– Battery-powered devices and tools, such as power tools, e-bikes, and e-scooters, where reliability and efficiency are paramount.
– Industrial applications, including forklifts and battery backup units, where energy efficiency drives operational savings.
Advancements Over Previous Generations
Compared to its predecessor, the OptiMOS Linear FET, the OptiMOS 5 Linear FET 2 delivers significant improvements in SOA at elevated temperatures, reduced gate leakage, and a wider range of packages. These enhancements enable more MOSFETs to be connected in parallel, increasing design flexibility and reducing overall system costs.
Supporting the Future of Power Electronics
Infineon’s OptiMOS 5 Linear FET 2 exemplifies the company’s commitment to providing cutting-edge solutions for power electronics. By enabling safe hot-swap operation and robust battery protection, this MOSFET addresses critical challenges in high-power applications. Its superior performance, cost efficiency, and versatility position it as a key enabler for future advancements in energy-efficient, high-reliability systems.
With its ability to meet the demanding requirements of modern applications, the OptiMOS 5 Linear FET 2 sets a new benchmark for power MOSFETs, paving the way for more efficient and reliable power systems.
