In a significant advancement in semiconductor technology, Nexperia has revealed its latest breakthrough—Gallium nitride (GaN) field-effect transistor (FET) devices. These state-of-the-art devices feature advanced high-voltage GaN high-electron-mobility transistor (HEMT) technology and are housed in Nexperia’s proprietary copper-clip CCPAK surface mount packaging. This groundbreaking technology is now available for designers focusing on industrial and renewable energy applications.
Leveraging two decades of expertise in delivering high-volume, high-quality copper-clip surface mount device (SMD) packaging, Nexperia has extended its packaging prowess to GaN cascade switches in CCPAK. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, signifies the advent of a new era in wide bandgap semiconductors and copper-clip packaging.
This technology holds great promise for renewable energy applications such as solar panels and residential heat pumps, aligning with Nexperia’s commitment to advancing component technology for sustainable solutions. It is also well-suited for diverse industrial applications, including servo drives, switched-mode power supplies (SMPS), servers, and telecom equipment.
The CCPAK surface mount packaging utilizes Nexperia’s proven copper-clip package technology, replacing internal bond wires. This approach reduces parasitic losses, optimizes electrical and thermal performance, and enhances device reliability. To accommodate varied design needs, these CCPAK GaN FETs are available in both top and bottom-cooled configurations, improving heat dissipation capabilities.
The cascade configuration delivers exceptional switching and on-state performance with a robust gate that offers high immunity against noise. This unique feature simplifies application designs by eliminating the need for complex gate drivers and control circuitry, allowing for convenient use of standard silicon MOSFET drivers. The GaN technology enhances switching stability and reduces die size by approximately 24%. Additionally, the device’s RDS(on) is impressively reduced to only 33 mΩ (typ.) at 25 °C, accompanied by a high threshold voltage and low diode forward voltage.
Carlos Castro, Vice President, and General Manager of the GaN FET business at Nexperia, emphasized, “Nexperia recognizes the crucial need for robust switching solutions with exceptional thermal efficiency in power conversion applications for industrial and renewable energy equipment designers. This is why Nexperia has combined the outstanding switching performance of its cascade GaN FETs with the exceptional thermal properties of its CCPAK packaging, providing customers with a compelling solution.”
 field-effect transistor (FET) devices. These state-of-the-art devices feature advanced high-voltage GaN high-electron-mobility transistor (HEMT) technology and are housed in Nexperia's proprietary copper-clip CCPAK surface mount packaging.){kind=link}