Nexperia Expands its Wide Bandgap Semiconductor

November 9, 2021

Nexperia, the expert in essential semiconductors announced its entry into the high-power Silicon Carbide (SiC) diodes market with the introduction of 650 V, 10 A SiC Schottky diodes. This is a strategic move for Nexperia, already a trusted supplier of efficient power Gallium Nitride (GaN) FETs, to expand its high-voltage wide bandgap semiconductor device offering.

Nexperia’s first SiC Schottky diode is an industrial-grade device with 650 V repetitive peak reverse voltage (V_RRM) and 10 A continuous forward current (I_F), designed to combine ultra-high performance and high efficiency with low energy loss in power conversion applications. Providing the added benefit of a high-voltage compliant real 2-pin (R2P) package with higher creepage distance, it is available in a choice of surface mount (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247-2) devices. Engineering samples are available on request with a full product release planned for the second quarter of 2022. Nexperia plans to continuously increase its portfolio of SiC diodes, which will lead to a total of 72 products operating at voltage levels of 650 V and 1200 V and with currents in the range of 6-20 A.

In an increasingly energy-conscious world, there is a burgeoning demand for high power applications with superior efficiency and power density. In this regard, Silicon is fast approaching its physical limits. According to Mark Roeloffzen, General Manager of the Bipolar Discretes Group at Nexperia “Wide bandgap semiconductors like Gallium Nitride and Silicon Carbide are now well placed to meet the stringent needs of high-volume applications, bringing the promise of higher efficiency, greater power density, lower system cost and reduced operating costs for original equipment manufacturers. Nexperia’s diverse portfolio of SiC diodes will bring greater choice and availability to this market.”