Mouser Left Banner
Mouser Left Banner
Mouser Left Banner
Mouser Left Banner
Mouser Left Banner
Mouser Left Banner
More

    New MOSFET enables high-efficiency power control applications including electric and hybrid vehicles

    Littelfuse, Inc., introduced its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.

    SiC MOSFET LSIC1MO170E1000

    High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacenters, and auxiliary power supplies. When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.

    Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include:

    • Solar inverters
    • Switch-mode and uninterruptible power supplies
    • Motor drives
    • High-voltage DC/DC converters
    • Induction heating

    “This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse. “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices.

    The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances.”

    The new 1700V, 1 Ohm SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:

    • Optimized for high-frequency, high-efficiency applications
    • Extremely low gate charge and output capacitance
    • Low gate resistance for high-frequency switching

     Availability

    LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests may be placed through authorized Littelfuse distributors worldwide. For a listing of Littelfuse distributors, please visit Littelfuse.com.

    ELE Times Research Desk
    ELE Times Research Deskhttps://www.eletimes.com
    ELE Times provides a comprehensive global coverage of Electronics, Technology and the Market. In addition to providing in depth articles, ELE Times attracts the industry’s largest, qualified and highly engaged audiences, who appreciate our timely, relevant content and popular formats. ELE Times helps you build awareness, drive traffic, communicate your offerings to right audience, generate leads and sell your products better.

    Technology Articles

    Popular Posts

    Latest News

    Must Read

    ELE Times Top 10